unisonic technologies co., ltd UGP7N60 preliminary insulated gate bipolar transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r203-048.a 600v, smps n-channel igbt ? descripti on t h e ut c ugp7n6 0 is an n-chann el igbt . it uses u t c?s adva n ced tec hnol og y to provid e custo m ers w i t h h i gh i npu t imped anc e, hig h s w itc h in g sp eed a nd lo w c o nducti on loss, etc. t he u t c ugp7n6 0 is suitable for hi gh voltag e s w itc h i ng, hig h freque nc y s w i t ch mode p o w e r suppli e s. ? features * high s w itc h in g spee d * high i n p u t imped ance * lo w co nducti on loss ? sy mbol to-220 1 ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 UGP7N60l-ta3-t UGP7N60g-ta3-t to-220 g c e tube note: pin assignment: g: gate c: collector e: emitter http://
UGP7N60 preliminary insulated gate bipolar transistor unisonic technologi es co., ltd 2 of 3 w w w . uniso nic.co m.t w q w - r 2 0 3 - 0 4 8 . a ? absolute maxi mu m ra ting s (t c =2 5 c, unle ss other w i s e specifie d) paramet er symbol r at ings unit collector-emitter voltage v ce s 600 v contin uo us co llector curr ent t c = 25c i c 34 a t c = 110c 14 a coll ector curre nt pulsed (n ote 2) i cm 56 a gate to emitter voltage c onti nuo us v ges 20 v gate to emitter voltage pu lse d v gem 30 v s w itc h in g safe operating are a at t j = 150c ssoa 35 (at 600v) a singl e puls e avalanc he en er g y at t c = 25c e as 25 (at 7a) mj po w e r diss i pat ion t o tal at t c = 25c p d 125 w po w e r diss i pat ion der a tin g t c > 25c 1.0 w/c junctio n t e mperature t j -55~ + 150 c storage t e mperature r ang e t st g -55~ + 150 c notes: 1. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op er atio n is not i m plie d. absol u te ma xi mum ratings ar e those val ues be yo nd w h ich the dev ice cou l d be perm ane n t l y dam ag ed. 2. pulse w i dth lim ited b y ma xim u m junctio n temperatur e. ? th er mal char ac teri stic s paramet er symbol rat i ngs unit junction to case jc 1.0 c/w ? electric al ch ara cteri s tic s (t j =2 5 c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t y p max unit collector-emitter breakdo w n voltage bv ce s i c = 250a, v ge =0v 600 v emitter to collecto r bre a k dow n vo l t ag e bv ec s i c = 10ma, v ge =0v 20 v collector-emitter leakage current i ces v ce =600v t j = 25c 250 a t j = 125c 2 ma collector-emitter satu ration voltage v c e( sat ) i c =7 a, v ge = 15v t j = 25c 1.3 2.7 v t j = 125c 1 2.2 v gate to emitter t h reshold volt age v ge ( th ) i c = 250a 4.5 5.9 7.2 v gate to emitter leaka ge curr ent i ges v ge = 20v 25 0 na s w itc h ing soa ssoa t j = 150c, r g =2 5 ? , v ge = 15v l= 100 h, v ge = 600v 35 a pulse d avala n c he ener g y e as i ce = 7 a, l= 500h 25 mj gate to emitter plateau vo ltag e v gep i c =7 a, v ce = 80v 10 v on-state gate charge q g(o n ) i c =7 a, v ce = 300v v ge = 15v 37 45 nc v ge = 20v 48 60 nc current t u rn-on delay t i me t don ) i igbt and diod e at t j = 25c, i ce =7 a, v ge = 13.5v, r g =5 0 ? , r l =1 ? , t e st ci rcuit (note 1) 400 ns current ris e t i me t ri 2.6 s current t u rn-off delay t i me t doff ) i 300 ns current fall t i me t fi 2 s Q note: 1.pulse t e st : pulse w i dth 5 0 s.
UGP7N60 preliminary insulated gate bipolar transistor unisonic technologi es co., ltd 3 of 3 w w w . uniso nic.co m.t w q w - r 2 0 3 - 0 4 8 . a ? test circ uit and w avefo rms r g =25 + - v dd fi g 1. inducti ve switchi n g test ci rc ui t v ge v ce i ce 90 % 10 % 90 % 10 % t d( on ) i t ri t fi fig 2. switchi ng tes t w aveforms t d( off)i r l =1 ut c a s s u m e s n o r e s p o n s i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r o d u cts a t v a lu e s th a t ex ce ed, ev e n m om en t ar i l y , r ate d v a l ue s (s uch as m a x i m um rati ngs , ope ra ti ng con di t i o n ra ng es , o r other parameters ) l i s ted i n pr odu cts s peci f i c a t i on s of a ny and all u t c p r od ucts d es c r i bed o r contai ne d her ei n. ut c p r od ucts a r e n ot de si gn ed f or us e i n l i f e s upp ort a p p l i ances , de v i ce s o r sy st em s w her e m a l f un cti o n o f thes e p r od ucts ca n b e rea son abl y ex pected to re su l t i n per so n a l i n j u r y . r epr od ucti o n i n w hol e o r i n par t is p r oh i b i t e d w i tho u t the p r i o r w r i tte n con sent o f the co pyr i ght ow n e r . t h e i n f o rm ati o n pre sen ted i n th i s do cum e n t d o e s no t f o r m pa rt of an y q uotati o n or con t ra ct, i s b e l i e v e d to b e a ccu rate and re l i a b l e a nd m a y be cha n g ed w i tho u t n o ti ce.
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